사업영역 Solutions

Chip & Display Manufacturing

  • 사업영역 Solutions
  • Chip & Display Manufacturing

Wet Processing

Ozonated and Ultrapure Water Delivery Solutions for
Semiconductor Applications

  • Wet chemical cleaning and conditioning of wafer surfaces is a critical process step in most.
  • The Ozonated Water Reclaim System provides a cost-effective solution.

Hydrogenated and Ultrapure Water Delivery Solutions for
Semiconductor Applications

  • 반도체, 액정표시장치 등의 피세정물을 환원성 가스인 수소 가스를 용정 하여 세정액으로 사용함.
  • 초순도 수소수는 유기물 및 미립자, 금속이온, 음이온, 용존 산소 제거에 효과적임.
  • 암모니아 Doping으로 Conductivity 제어하여 초 미립자 제거에도 효과적임.
  • 미립자 재 부착 방지를 위해서 Glass/Wafer 표면과 미립자의 표면 전위를 동부호화하여 반발시킴.
  • 종전에는 이런 재 부착 방지를 위해서 세정액의 PH를 높게 하여 강알칼리가 필요했으며 이로 인해
    Glass/ Wafer 표면에 필요 이상 거칠어지는 문제 발생.
  • 하지만 수소수 세정액은 PH 중성 부근에서도 Glass/Wafer 표면 및 미립자의 표면 전위를 마이너스로 대전하여 전기적 반발에 의한 미립자 재 부착 방지.

Basic Process Sequence

  • Piranha
    or SPM
    SOM Removes heavy organics
  • D-O3 passivates surface
  • D-H2 Removes particles / light organics
  • D-H2[A] Removes particles / light organics [NH4OH]
  • DHF Removes thin grown or native oxides
  • HCL Removes metallic impurities
  • SC1 Removes particles / light organics
  • SC2 Removes trace metallic contaminants

Alumina Particle Removal

Test# DIH2 Concentration
(PPM)
Mixed Chemical Cleaning Condition Wafer Surface 으로의
부착 Al 입자 수(개)
Main
Tool
Temper
ature
Cleaning
Time
(min)
Before(Particle#) After(Particle#)
01 0.0 Only UPW Batch 23°C 10 7890 4700
02 0.0 4.3% H2O2 과산화수소 Batch 23°C 10 7505 1580
03 0.0 NH4OH 암모니아 함유
(0.02ppm)
Batch 23°C 10 7700 1300
04 0.0 4.1% NH4OH암모니아
4.3% H2O2과산화수소
Batch 23°C 10 7589 780
05 0.8 Only DIH2 Batch 23°C 10 7695 25
06 0.8 NH4OH 암모니아 함유
(0.02ppm)
Batch 23°C 10 7800 21

Wafer and Chamber Cleaning

Highly Efficient Cleaning and Surface Preparation Solutions for Thin Films

Wafer Cleaning

The increase in semiconductor etch and deposition steps, rely heavily on cleaning processes like photoresist strip and descum to ensure
contamination free surfaces. Contamination free surfaces for highly sensitive devices Surface preparation and activation for better adhesion

Chamber Cleaning

Providing reliable sources of active NF3 and other fluorine-based radical species as well as reactive species derived from O2, N2, H2 and H2O. These generators find application in deposition technologies in which remote sources of plasma species are needed and in maintenance functions such as the generation of reactive species for CVD chamber cleaning.

Deposition

Highly Efficient Cleaning and Surface Preparation Solutions for Thin Films

Ozone Generation and Delivery

Ozone gas generators are suitable for a variety of purposes including TEOS/O3 SACVD & ALD System solutions. They incorporate field proven, high concentration, ultra-clean ozone generation technology as well as integrated ozone concentration monitor, flow control, and power distribution. Safety monitors, status indicator, and ozone destruct are available on some models

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